19/30404655 DC - BS EN IEC 63229. Semiconductor devices. The classification of defects in gallium nitride epitaxial film on silicon carbide substrate

19/30404655 DC

BS EN IEC 63229. Semiconductor devices. The classification of defects in gallium nitride epitaxial film on silicon carbide substrate

Status : Current, Draft for public comment   Published : October 2019

Format
PDF

Format
HARDCOPY






Standard Number19/30404655 DC
TitleBS EN IEC 63229. Semiconductor devices. The classification of defects in gallium nitride epitaxial film on silicon carbide substrate
StatusCurrent, Draft for public comment
Publication Date17 October 2019
Normative References(Required to achieve compliance to this standard)No other standards are normatively referenced
Informative References(Provided for Information)No other standards are informatively referenced
International RelationshipsIEC 63229 Ed.1.0
Draft Expiry Date04 December 2019
DescriptorsComponents, Computer hardware, Common terms, Substrates (insulating), Electrical equipment, Electrical components, Electronic equipment and components, Computer components, Semiconductor technology
ICS31.080.01
CommitteeEPL/47
PublisherBSI
FormatA4
DeliveryYes
Pages23
File Size1.6 MB
NotesWarning: this draft is not current beyond its expiry date for comments.
Price£20.00


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