18/30382424 DC - BS IEC 63068-3. Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices. Part 3. Test method for defects using photoluminescence

18/30382424 DC

BS IEC 63068-3. Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices. Part 3. Test method for defects using photoluminescence

Status : Current, Draft for public comment   Published : December 2018

Format
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Format
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Standard Number18/30382424 DC
TitleBS IEC 63068-3. Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices. Part 3. Test method for defects using photoluminescence
StatusCurrent, Draft for public comment
Publication Date12 December 2018
Normative References(Required to achieve compliance to this standard)ISO 24173
Informative References(Provided for Information)No other standards are informatively referenced
International RelationshipsIEC 63068-3 Ed.1.0
Draft Expiry Date20 November 2019
DescriptorsTests, Testing, Integrated circuit technology, Semiconductor devices, Electronic equipment and components
ICS31.080.01
CommitteeEPL/47
PublisherBSI
FormatA4
DeliveryYes
Pages30
File Size873 KB
NotesWarning: this draft is not current beyond its expiry date for comments.
Price£20.00


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