18/30381548 DC - BS EN 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method

18/30381548 DC

BS EN 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method

Status : Current, Draft for public comment   Published : August 2018

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Standard Number18/30381548 DC
TitleBS EN 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
StatusCurrent, Draft for public comment
Publication Date03 August 2018
Normative References(Required to achieve compliance to this standard)IEC 62417
Informative References(Provided for Information)JEITA ED-4704A, JEDEC JESD241
International RelationshipsIEC 62373-1 Ed.1.0
Draft Expiry Date12 September 2018
DescriptorsTesting conditions, Semiconductors, Voltage measurement, Electronic equipment and components, Temperature, Transistors, Metal oxide semiconductors, Semiconductor devices
ICS31.080.30
CommitteeEPL/47
PublisherBSI
FormatA4
DeliveryYes
Pages17
File Size628 KB
NotesWarning: this draft is not current beyond its expiry date for comments.
Price£20.00


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