BS IEC 63068-2:2019 - Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices. Test method for defects using optical inspection

BS IEC 63068-2:2019

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices. Test method for defects using optical inspection

Status : Current   Published : February 2019

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PDF

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HARDCOPY



IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.

 




Standard NumberBS IEC 63068-2:2019
TitleSemiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices. Test method for defects using optical inspection
StatusCurrent
Publication Date08 February 2019
Normative References(Required to achieve compliance to this standard)No other standards are normatively referenced
Informative References(Provided for Information)ISO 24173
International RelationshipsIEC 63068-2:2019
Draft Superseded By18/30366379 DC
DescriptorsInspection, Test methods, Silicon carbide, Defects, Electronic equipment and components, Integrated circuit technology, Semiconductor devices
ICS31.080.99
CommitteeEPL/47
ISBN978 0 580 51374 9
PublisherBSI
FormatA4
DeliveryYes
Pages28
File Size2.743 MB
Price£182.00


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