BS IEC 63068-1:2019 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices. Classification of defects

BS IEC 63068-1:2019

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices. Classification of defects

Status : Current   Published : May 2019

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What is this standard about?

This part of IEC 63068 gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.




Standard NumberBS IEC 63068-1:2019
TitleSemiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices. Classification of defects
StatusCurrent
Publication Date10 May 2019
Normative References(Required to achieve compliance to this standard)No other standards are normatively referenced
Informative References(Provided for Information)ISO 15247:2015, ISO 24173
International RelationshipsIEC 63068-1:2019
Draft Superseded By17/30351625 DC
DescriptorsSilicon carbide, Defects, Integrated circuit technology, Semiconductor devices, Electronic equipment and components
ICS31.080.99
CommitteeEPL/47
ISBN978 0 580 96413 8
PublisherBSI
FormatA4
DeliveryYes
Pages26
File Size5.356 MB
Price£182.00


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