ASTM C863 - 00(2016) - Standard Test Method for Evaluating Oxidation Resistance of Silicon Carbide Refractories at Elevated Temperatures

ASTM C863 - 00(2016)

Standard Test Method for Evaluating Oxidation Resistance of Silicon Carbide Refractories at Elevated Temperatures

Status : Current   Published : June 2016

Format
PDF

Format
HARDCOPY



1.1 This test method covers the evaluation of the oxidation resistance of silicon carbide refractories at elevated temperatures in an atmosphere of steam. The steam is used to accelerate the test. Oxidation resistance is the ability of the silicon carbide (SiC) in the refractory to resist conversion to silicon dioxide (SiO 2) and its attendant crystalline growth.

1.2  This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.




Standard NumberASTM C863 - 00(2016)
TitleStandard Test Method for Evaluating Oxidation Resistance of Silicon Carbide Refractories at Elevated Temperatures
StatusCurrent
Publication Date01 June 2016
Normative References(Required to achieve compliance to this standard)No other standards are normatively referenced
Informative References(Provided for Information)No other standards are informatively referenced
Descriptors Oxidation, Refractories, Silicon carbide
ICS81.080
PublisherASTM
FormatA4
DeliveryYes
Pages2
File Size61 KB
Price£36.00


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