BS IEC 62880-1:2017 - Semiconductor devices. Stress migration test standard. Copper stress migration test standard

BS IEC 62880-1:2017

Semiconductor devices. Stress migration test standard. Copper stress migration test standard

Status : Current   Published : July 2020

Format
PDF

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HARDCOPY



IEC 62880-1:2017(E) describes a constant temperature (isothermal) aging method for testing copper (Cu) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding (SIV). This method is to be conducted primarily at the wafer level of production during technology development, and the results are to be used for lifetime prediction and failure analysis. Under some conditions, the method can be applied to package-level testing. This method is not intended to check production lots for shipment, because of the long test time.




Standard NumberBS IEC 62880-1:2017
TitleSemiconductor devices. Stress migration test standard. Copper stress migration test standard
StatusCurrent
Publication Date21 July 2020
Normative References(Required to achieve compliance to this standard)No other standards are normatively referenced
Informative References(Provided for Information)JEDEC JESD214, JEITA ED-4704A, JEITA EDR-4704
International RelationshipsIEC 62880-1:2017
Draft Superseded By14/30297227 DC
DescriptorsElectronic equipment and components, Vocabulary, Integrated circuits, Electromechanical devices, Semiconductor devices, Terminology, Semiconductor technology
ICS31.080.01
CommitteeEPL/47
ISBN978 0 580 85808 6
PublisherBSI
FormatA4
DeliveryYes
Pages28
File Size1.607 MB
Price£182.00


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