BS EN 15991:2015 - Testing of ceramic and basic materials. Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV)

BS EN 15991:2015

Testing of ceramic and basic materials. Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV)

Status : Current   Published : November 2015

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This European Standard defines a method for the determination of the trace element concentrations of Al, Ca, Cr, Cu, Fe, Mg, Ni, Ti, V and Zr in powdered and granular silicon carbide. Dependent on element, wavelength, plasma conditions and weight, this test method is applicable for mass contents of the above trace contaminations from about 0,1 mg/kg to about 1 000 mg/kg, after evaluation also from 0,001 mg/kg to about 5 000 mg/kg. NOTE 1 Generally for optical emission spectrometry using inductively coupled plasma (ICP OES) and electrothermal vaporization (ETV) there is a linear working range of up to four orders of magnitude. This range can be expanded for the respective elements by variation of the weight or by choosing lines with different sensitivity. After adequate verification, the standard is also applicable to further metallic elements (excepting Rb and Cs) and some non-metallic contaminations (like P and S) and other allied non-metallic powdered or granular materials like carbides, nitrides, graphite, soot, coke, coal, and some other oxidic materials (see [1], [4], [5], [6], [7], [8], [9] and [10]). NOTE 2 There is positive experience with materials like, for example, graphite, B4C, Si3N4, BN and several metal oxides as well as with the determination of P and S in some of these materials.




Standard NumberBS EN 15991:2015
TitleTesting of ceramic and basic materials. Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV)
StatusCurrent
Publication Date30 November 2015
Normative References(Required to achieve compliance to this standard)No other standards are normatively referenced
Informative References(Provided for Information)ISO 5022:1979, ISO 8656-1:1988, EN ISO 21068-1:2008, ISO 21068-1:2008, ISO 5725-2:1994, ISO/IEC Guide 98-3, GUM:1995, EURACHEM/CITAC GUIDE CG 4, ISO 5725-4:1994
ReplacesBS EN 15991:2011
International RelationshipsEN 15991:2015
Draft Superseded By14/30283939 DC
DescriptorsCeramics, Raw materials, Refractory materials, Silicon inorganic compounds, Carbides, Particulate materials, Chemical analysis and testing, Determination of content, Impurities, Trace element analysis, Emission spectrophotometry, Vaporization
ICS81.060.10
Title in FrenchEssais sur matériaux céramiques et basiques. Détermination directe des fractions massiques d'impuretés dans les poudres et les granulés de carbure de silicium par spectroscopie d'émission optique à plasma induit par haute fréquence (ICP OES) avec vaporisation électrothermique (ETV)
Title in GermanPrüfung keramischer Roh- und Werkstoffe. Direkte Bestimmung der Massenanteile von Spurenverunreinigungen in pulver- und kornförmigem Siliciumcarbid mittels optischer Emissionsspektroskopie mit induktiv gekoppeltem Plasma (ICP OES) und elektrothermischer Verdampfung (ETV)
CommitteeRPI/1
ISBN978 0 580 83140 9
PublisherBSI
FormatA4
DeliveryYes
Pages30
File Size1.183 MB
Price£182.00


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