BS EN 62374-1:2010 - Semiconductor devices. Time-dependent dielectric breakdown (TDDB) test for inter-metal layers
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BS EN 62374-1:2010

Semiconductor devices. Time-dependent dielectric breakdown (TDDB) test for inter-metal layers

Status : Current   Published : December 2010

Format
PDF

Format
HARDCOPY



The contents of the interpretation sheet 1 of July 2017 have been included in this copy.




Standard NumberBS EN 62374-1:2010
TitleSemiconductor devices. Time-dependent dielectric breakdown (TDDB) test for inter-metal layers
StatusCurrent
Publication Date31 December 2010
Normative References(Required to achieve compliance to this standard)No other standards are normatively referenced
Informative References(Provided for Information)No other standards are informatively referenced
International RelationshipsIEC 60809:2014/AMD1:2017,EN 62374-1:2010/AC:2011
Amended ByCorrigendum, June 2011
DescriptorsElectrical measurement, Semiconductors, Dielectric breakdown, Life (durability), Testing conditions, Semiconductor devices, Films (states of matter)
ICS29.140.20
31.080.01
43.040.20
Title in FrenchDispositifs à semiconducteurs. Essai de rupture diélectrique en fonction du temps (TDDB) pour les couches intermétalliques
Title in GermanHalbleiterbauelemente. Prüfung auf zeitabhängigen dielektrischen Durchbruch (TDDB) bei Isolationsschichten zwischen metallischen Leiterbahnen
CommitteeEPL/47
ISBN978 0 580 75206 3
PublisherBSI
FormatA4
DeliveryYes
Pages20
File Size674 KB
Price£134.00


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