BS EN 62417:2010 - Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) – BSI British Standards

BS EN 62417:2010

Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

Status : Current   Published : June 2010

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PDF

Format
HARDCOPY



BS EN 62417:2010 Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

BS EN 62417 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors.

It is applicable to both active and parasitic field effect transistors.

The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.

Contents of BS EN 62417:

Scope
2 Abbreviations and letter symbols
3 General description
4 Test equipment
5 Test structures
6 Sample size
7 Conditions
8 Procedure
8.1 Bias temperature stress
8.2 Voltage sweep
9 Criteria
10 Reporting

 




Standard NumberBS EN 62417:2010
TitleSemiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
StatusCurrent
Publication Date30 June 2010
Normative References(Required to achieve compliance to this standard)No other standards are normatively referenced
Informative References(Provided for Information)No other standards are informatively referenced
International RelationshipsEN 61192-1:2003,EN 62417:2010,IEC 62417:2010
Draft Superseded By07/30163752 DC08/30177346 DC
DescriptorsTransistors, Metals, Semiconductor devices, Thermal testing, Ions, Semiconductors, Field-effect transistors, Migration (chemical), Electrical measurement, Oxides
ICS31.080.30
Title in FrenchDispositifs à semiconducteurs. Essais d'ions mobiles pour transistors à semiconducteur à oxyde métallique à effet de champ (MOSFET)
Title in GermanHalbleiterbauelemente. Prüfverfahren auf mobile Ionen für Feldeffekttransistoren mit Metall-Oxid-Halbleiter (MOSFET)
CommitteeEPL/47
ISBN978 0 580 58622 4
PublisherBSI
FormatA4
DeliveryYes
Pages12
File Size391 KB
Price£110.00


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