BS EN 62416:2010 - Semiconductor devices. Hot carrier test on MOS transistors

BS EN 62416:2010

Semiconductor devices. Hot carrier test on MOS transistors

Status : Current   Published : July 2010

Format
PDF

Format
HARDCOPY



IEC 62416:2010 describes the wafer level hot carrier test on NMOS and PMOS transistors. The test is intended to determine whether the single transistors in a certain (C)MOS process meet the required hot carrier lifetime.




Standard NumberBS EN 62416:2010
TitleSemiconductor devices. Hot carrier test on MOS transistors
StatusCurrent
Publication Date31 July 2010
Normative References(Required to achieve compliance to this standard)No other standards are normatively referenced
Informative References(Provided for Information)No other standards are informatively referenced
International RelationshipsEN 62416:2010,IEC 62416:2010
Draft Superseded By07/30163748 DC08/30177349 DC
DescriptorsSemiconductor devices, Metal oxide semiconductors, Endurance testing, Electrical testing, Stress, Semiconductors, Transistors, Life (durability)
ICS31.080.30
Title in FrenchDispositifs à semi-conducteurs. Essai de porteur chaud sur les transistors MOS
Title in GermanHalbleiterbauelemente. Hot-Carrier-Prüfverfahren für MOSTransistoren
CommitteeEPL/47
ISBN978 0 580 58621 7
PublisherBSI
FormatA4
DeliveryYes
Pages14
File Size387 KB
Price£110.00


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