BS IEC 60747-8:2010 - Semiconductor devices. Discrete devices. Field-effect transistors

BS IEC 60747-8:2010

Semiconductor devices. Discrete devices. Field-effect transistors

Status : Current, Under review   Published : June 2011

Format
PDF

Format
HARDCOPY



IEC 60747-8:2010 gives standards for the following categories of field-effect transistors:


- type A: junction-gate type;


- type B: insulated-gate depletion (normally on) type;


- type C: insulated-gate enhancement (normally off) type.


The main changes with respect to the previous edition are listed below.


a) "Clause 3 Classification" was moved and added to Clause 1.


b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions.


c) Clause 5, 6 and 7 were amended with necessary additions and deletions.



This publication is to be read in conjunction with

IEC 60747-1:2006

.




Standard NumberBS IEC 60747-8:2010
TitleSemiconductor devices. Discrete devices. Field-effect transistors
StatusCurrent, Under review
Publication Date30 June 2011
Normative References(Required to achieve compliance to this standard)IEC 61340, IEC 60747-1:2006, IEC 60749-23:2004, IEC 60747-7:2000, IEC 60749-34
Informative References(Provided for Information)IEC 60747-2:2000
ReplacesBS IEC 60747-8:2000
International RelationshipsIEC 60747-8:2010
Draft Superseded By07/30161967 DC
DescriptorsField-effect transistors, Electrical insulation, Electronic equipment and components, Junction transistors, Integrated circuits, Semiconductor devices, Transistors
ICS31.080.30
Title in FrenchDispositifs à semiconducteurs. Dispositifs descrets. Transistors à effet de champ
Title in GermanHalbleiterbauelemente. Einzel-Halbleiterbauelemente. Feldeffekttransistoren
CommitteeEPL/47
ISBN978 0 580 58370 4
PublisherBSI
FormatA4
DeliveryYes
Pages80
File Size1.55 MB
Price£274.00


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