BS IEC 60747-8:2010 - Semiconductor devices. Discrete devices. Field-effect transistors
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BS IEC 60747-8:2010

Semiconductor devices. Discrete devices. Field-effect transistors

Status : Current, Under review   Published : June 2011



IEC 60747-8:2010 gives standards for the following categories of field-effect transistors:

- type A: junction-gate type;

- type B: insulated-gate depletion (normally on) type;

- type C: insulated-gate enhancement (normally off) type.

The main changes with respect to the previous edition are listed below.

a) "Clause 3 Classification" was moved and added to Clause 1.

b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions.

c) Clause 5, 6 and 7 were amended with necessary additions and deletions.

This publication is to be read in conjunction with

IEC 60747-1:2006


Standard NumberBS IEC 60747-8:2010
TitleSemiconductor devices. Discrete devices. Field-effect transistors
StatusCurrent, Under review
Publication Date30 June 2011
Normative References(Required to achieve compliance to this standard)IEC 61340, IEC 60747-1:2006, IEC 60749-23:2004, IEC 60747-7:2000, IEC 60749-34
Informative References(Provided for Information)IEC 60747-2:2000
ReplacesBS IEC 60747-8:2000
International RelationshipsIEC 60747-8:2010
Draft Superseded By07/30161967 DC
DescriptorsField-effect transistors, Electrical insulation, Electronic equipment and components, Junction transistors, Integrated circuits, Semiconductor devices, Transistors
Title in FrenchDispositifs à semiconducteurs. Dispositifs descrets. Transistors à effet de champ
Title in GermanHalbleiterbauelemente. Einzel-Halbleiterbauelemente. Feldeffekttransistoren
ISBN978 0 580 58370 4
File Size1.55 MB

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