BS IEC 60747-8-4:2004 - Discrete semiconductor devices. Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications

BS IEC 60747-8-4:2004

Discrete semiconductor devices. Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications

Status : Current   Published : November 2004

Format
PDF

Format
HARDCOPY



Gives details for the following categories of metal-oxide semiconductor field-effect transistors (MOSFETs) with inverse diodes: type B depletion (normally on) type and Type C enhancement (normally off) type.




Standard NumberBS IEC 60747-8-4:2004
TitleDiscrete semiconductor devices. Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications
StatusCurrent
Publication Date09 November 2004
Normative References(Required to achieve compliance to this standard)IEC 60747-2:2000, IEC 60747-1:1983, IEC 60747-8:2000
Informative References(Provided for Information)IEC/PAS 62180:2000, IEC 60747-9:1998, IEC 60747-27:2003, IEC 60747-7:2000, IEC 60747-9:1998/AMD 1:2001
International RelationshipsIEC 60747-8-4:2004
DescriptorsIntegrated circuits, Semiconductor devices, Transistors, Metal oxide semiconductors, Electronic equipment and components
ICS31.080.30
Title in FrenchDispositifs discrets a semiconducteurs. Transistors a semiconducteurs a oxyde metallique a effet de champ (MOSFET) pour les applications de commutation de puissance
CommitteeEPL/47
ISBN0 580 44729 4
PublisherBSI
FormatA4
DeliveryYes
Pages64
File Size954 KB
Price£254.00


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