BS IEC 60747-8:2000 - Discrete semiconductor devices and integrated circuits. Field-effect transistors. Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors.

BS IEC 60747-8:2000

Discrete semiconductor devices and integrated circuits. Field-effect transistors. Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors.

Status : Revised, Withdrawn   Published : June 2001 Replaced By : BS IEC 60747-8:2010

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Gives standards for the following categories of field-effect transistors : -Type A: junction-gate type; -Type B: insulated-gate depletion type; -Type C: insulated-gate enhancement type.




Standard NumberBS IEC 60747-8:2000
TitleDiscrete semiconductor devices and integrated circuits. Field-effect transistors. Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors.
StatusRevised, Withdrawn
Publication Date15 June 2001
Withdrawn Date30 June 2011
Normative References(Required to achieve compliance to this standard)No other standards are normatively referenced
Informative References(Provided for Information)No other standards are informatively referenced
Replaced ByBS IEC 60747-8:2010
ReplacesBS 6493-1.8:1985, IEC 60747-8:1984
International RelationshipsIEC 60747-8:2000
DescriptorsField-effect transistors, Transistors, Electronic equipment and components, Electrical insulation, Junction transistors, Semiconductor devices, Integrated circuits
ICS31.080.30
Title in FrenchDispositifs a semiconducteurs. Transistors a effet de champ
Title in GermanHalbleiterbauelemente. Feldeffekttransistoren
CommitteeEPL/47
ISBN0 580 37471 8
PublisherBSI
FormatA4
DeliveryNo
Pages72
File Size1.27 MB
Price£274.00


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