BS 6493-1.7:1989, IEC 60747-7:1988 - Semiconductor devices. Discrete devices. Recommendations for bipolar transistors

BS 6493-1.7:1989, IEC 60747-7:1988

Semiconductor devices. Discrete devices. Recommendations for bipolar transistors

Status : Superseded, Withdrawn   Published : September 1989 Replaced By : BS IEC 60747-7:2000

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Terminology and letter symbols for four different types. Essential ratings and characteristics of the devices and general and reference measuring methods. A series of electrical endurance tests designed to verify acceptability and reliability.




Standard NumberBS 6493-1.7:1989, IEC 60747-7:1988
TitleSemiconductor devices. Discrete devices. Recommendations for bipolar transistors
StatusSuperseded, Withdrawn
Publication Date29 September 1989
Withdrawn Date15 June 2001
Normative References(Required to achieve compliance to this standard)No other standards are normatively referenced
Informative References(Provided for Information)No other standards are informatively referenced
Replaced ByBS IEC 60747-7:2000
International RelationshipsIEC 60747-7:1988
Amended ByAMD 7206
AMD 8705
DescriptorsImpedance measurement, Ratings, Letters (symbols), Resistance measurement, Capacitance measurement, Electronic equipment and components, Semiconductor devices, Symbols, Acceptance (approval), Endurance testing, Transistors, Definitions, Power transistors, Bipolar transistors, Test equipment, Circuits, Thermal testing, Voltage measurement, Electrical testing, Current measurement, Electrical properties and phenomena, Electrical wave measurement, Testing conditions, Noise (spurious signals)
ICS31.080.30
Title in FrenchDispositifs à semiconducteurs. Dispositifs discrets. Recommandations pour transistors bipolaires
Title in GermanHalbleiter-Bauelemente. Einzelhalbleiter. Empfehlungen zu bipolaren Transistoren
CommitteeEPL/47
ISBN0 580 17512 X
PublisherBSI
FormatA4
DeliveryNo
Pages106
File Size1.515 MB
Price£292.00


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