BS IEC 60747-7:2000 - Discrete semiconductor devices and integrated circuits. Bipolar transistors

BS IEC 60747-7:2000

Discrete semiconductor devices and integrated circuits. Bipolar transistors

Status : Revised, Superseded, Withdrawn   Published : June 2001 Replaced By : BS IEC 60747-7:2010+A1:2019

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Gives the requirements applicable to the following sub-categories of bipolar transistors: -low power signal transistors (excluding switching applications); -power transistors (excluding switching and high-frequency applications); -high-frequency power transistors for amplifier and oscillator applications; -switching transistors.




Standard NumberBS IEC 60747-7:2000
TitleDiscrete semiconductor devices and integrated circuits. Bipolar transistors
StatusRevised, Superseded, Withdrawn
Publication Date15 June 2001
Withdrawn Date28 February 2011
Normative References(Required to achieve compliance to this standard)No other standards are normatively referenced
Informative References(Provided for Information)No other standards are informatively referenced
Replaced ByBS IEC 60747-7:2010+A1:2019
ReplacesBS 6493-1.7:1989, IEC 60747-7:1988
International RelationshipsIEC 60747-7:2000
Draft Superseded By93/216394 DC
DescriptorsPower transistors, Oscillators, Signals, Semiconductor devices, Transistors, Bipolar transistors, Integrated circuits, Electronic equipment and components, High-frequency amplifiers, Low-voltage equipment, Radio equipment, Switching circuits
ICS31.080.30
Title in FrenchDispositifs a semiconducteurs. Transistors bipolaires
Title in GermanHalbleiterbauelemente. Bipolartransistoren
CommitteeEPL/47
ISBN0 580 37454 8
PublisherBSI
FormatA4
DeliveryNo
Pages124
File Size2.246 MB
Price£320.00


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